JPH0313745B2 - - Google Patents

Info

Publication number
JPH0313745B2
JPH0313745B2 JP57172027A JP17202782A JPH0313745B2 JP H0313745 B2 JPH0313745 B2 JP H0313745B2 JP 57172027 A JP57172027 A JP 57172027A JP 17202782 A JP17202782 A JP 17202782A JP H0313745 B2 JPH0313745 B2 JP H0313745B2
Authority
JP
Japan
Prior art keywords
film
insulating film
mask
mask film
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57172027A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5961181A (ja
Inventor
Takashi Ito
Toshihiro Sugii
Satoru Fukano
Hiroshi Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57172027A priority Critical patent/JPS5961181A/ja
Priority to US06/537,017 priority patent/US4545114A/en
Priority to EP83305971A priority patent/EP0107416B1/en
Priority to DE8383305971T priority patent/DE3380615D1/de
Publication of JPS5961181A publication Critical patent/JPS5961181A/ja
Publication of JPH0313745B2 publication Critical patent/JPH0313745B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP57172027A 1982-09-30 1982-09-30 半導体装置の製造方法 Granted JPS5961181A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57172027A JPS5961181A (ja) 1982-09-30 1982-09-30 半導体装置の製造方法
US06/537,017 US4545114A (en) 1982-09-30 1983-09-29 Method of producing semiconductor device
EP83305971A EP0107416B1 (en) 1982-09-30 1983-09-30 Method of producing semiconductor device
DE8383305971T DE3380615D1 (en) 1982-09-30 1983-09-30 Method of producing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57172027A JPS5961181A (ja) 1982-09-30 1982-09-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5961181A JPS5961181A (ja) 1984-04-07
JPH0313745B2 true JPH0313745B2 (en]) 1991-02-25

Family

ID=15934161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57172027A Granted JPS5961181A (ja) 1982-09-30 1982-09-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5961181A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60216581A (ja) * 1984-04-12 1985-10-30 Fujitsu Ltd 半導体装置の製造方法
JPS60216580A (ja) * 1984-04-12 1985-10-30 Fujitsu Ltd 半導体装置の製造方法
CA1279410C (en) * 1986-06-06 1991-01-22 Anatoly Feygenson Submicron bipolar transistor with buried silicide region
TWI650202B (zh) 2017-08-22 2019-02-11 智勝科技股份有限公司 研磨墊、研磨墊的製造方法及研磨方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54155778A (en) * 1978-05-30 1979-12-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture
JPS6028146B2 (ja) * 1979-12-12 1985-07-03 株式会社日立製作所 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS5961181A (ja) 1984-04-07

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